品牌：INFINEON,规格：工作温度最高值 150°C,
INFINEON
晶体管 双极-射频, NPN, 4.7 V, 45 GHz, 160 mW, 45 mA, 160 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.6 A, 500 V, 1.8 ohm, 13 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 30 V, 0.0029 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 3 A, -30 V, 98 mohm, -10 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 5 A, 600 V, 1.35 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0025 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 33 A, 150 V, 0.031 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 1.2 A, 20 V, 0.25 ohm, 4.5 V, 700 mV
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 3.7 A, 600 V, 1.89 ohm, 10 V, 3 V
(EN)
INFINEON
双路场效应管, MOSFET, 双P沟道, 4.9 A, -30 V, 58 mohm, -10 V, -1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 75 V, 0.0029 ohm, 10 V, 3.1 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 7.4 A, 700 V, 0.9 ohm, 10 V, 3 V
(EN)
INFINEON
场效应管, MOSFET, P沟道, -40V, 10.5A, SOIC
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.2 A, 20 V, 250 mohm, 4.5 V, 700 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0009 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 11 A, 30 V, 0.0093 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.1 A, 55 V, 0.065 ohm, 10 V, 2 V
(EN)
INFINEON
MOSFET, N CHANNEL, 25V, 44A, PQFN-5
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 20.7 A, 650 V, 190 mohm, 10 V, 3 V
(EN)
INFINEON
单晶体管, IGBT, 11 A, 3.17 V, 60 W, 1.2 kV, TO-263, 3 引脚
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0012 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 85 A, 40 V, 0.0018 ohm, 10 V, 2.2 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -100 A, -30 V, 0.0041 ohm, -10 V, -2.5 V
(EN)INFINEON
晶体管 双极-射频, NPN, 3.25 V, 57 GHz, 120 mW, 40 mA, 150 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 9 A, 500 V, 0.59 ohm, 13 V, 3 V
(EN)
