品牌：INFINEON,规格：工作温度最高值 150°C,
INFINEON
晶体管, MOSFET, N沟道, 10.9 A, 250 V, 0.146 ohm, 10 V, 3 V
(EN)
INFINEON
双路场效应管, MOSFET, N和P沟道, 2.7 A, 30 V, 110 mohm, 10 V, 1 V
INFINEON
晶体管, MOSFET, N沟道, 55 A, 20 V, 0.0044 ohm, 10 V, 2.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 10 A, 30 V, 0.01 ohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 11.3 A, 200 V, 0.108 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 7.3 A, 30 V, 30 mohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 63 A, 30 V, 0.0038 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管 双极-射频, NPN, 6 V, 14 GHz, 75 mW, 20 mA, 90 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 5 A, 500 V, 1.7 ohm, 10 V, 2 V
(EN)INFINEON
晶体管 双极-射频, NPN, 4 V, 42 GHz, 500 mW, 150 mA, 110 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 86 A, 60 V, 0.0055 ohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 22.4 A, 600 V, 0.162 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管 双极-射频, NPN, 4.5 V, 25 GHz, 150 mW, 40 mA, 60 hFE
(EN)INFINEON
双路场效应管, MOSFET, 双P沟道, -3.4 A, -55 V, 0.095 ohm, -10 V, -3 V
(EN)
INFINEON
场效应管, MOSFET, P沟道, -30V, -16A, SOIC
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 150 V, 0.042 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 31.2 A, 650 V, 0.099 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0011 ohm, 10 V, 3 V
(EN)INFINEON
晶体管 双极-射频, NPN, 4.1 V, 42 GHz, 200 mW, 50 mA, 110 hFE
(EN)
INFINEON
晶体管, MOSFET, P沟道, -4.3 A, -12 V, 50 mohm, -4.5 V, -550 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 106 A, 40 V, 0.0037 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.2 A, 30 V, 0.1 ohm, 10 V, 1 V
(EN)INFINEON
晶体管 双极-射频, NPN, 2.3 V, 65 GHz, 185 mW, 80 mA, 110 hFE
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 15 A, 650 V, 0.115 ohm, 10 V, 3.5 V
(EN)
INFINEON
场效应管, MOSFET, 双N沟道
(EN)
