规格：MSL MSL 1 -无限制,
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 40 V, 300 MHz, 625 mW, 1 A, 35 hFE
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 3.8 A, -30 V, 56 mohm, -10 V, -1.8 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -4 A, -20 V, 31 mohm, -4.5 V, -550 mV
(EN)
INFINEON
二极管, 射频/PIN, 单, 7 ohm, 50 V, SOD-323, 2引脚, 0.6 pF
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 音频, NPN, 80 V, 85 MHz, 20 W, 8 A, 60 hFE
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -3 A, -60 V, 125 mohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, PNP, -65 V, 100 MHz, 265 mW, -100 mA, 220 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, AEC-Q100, NPN, 40 V, 300 MHz, 225 mW, 200 mA, 40 hFE
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, -45 V, 100 MHz, 225 mW, -100 mA, 90 hFE
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 320 mA, 60 V, 0.9 ohm, 10 V, 1.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 14 A, -40 V, 0.036 ohm, 20 V, -1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, JFET, JFET, 30 V, -1.5 mA, -20 mA, 2.5 V, SOT-23, JFET
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 500 mA, 600 V, 8 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -7.6 A, -30 V, 0.024 ohm, -10 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -2 A, -30 V, 0.062 ohm, -10 V, -1.5 V
(EN)
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, 单路NPN, -50 V, -100 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率
(EN)ON SEMICONDUCTOR
单晶体管 双极, PNP, -40 V, 200 MHz, 225 mW, -600 mA, 20 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1 A, -20 V, 410 mohm, -4.5 V, -600 mV
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -160 mA, -60 V, 2.1 ohm, -10 V, -1.9 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 50 mohm, -10 V, -1.15 V
(EN)
INFINEON
晶体管 双极-射频, NPN, 12 V, 8 GHz, 450 mW, 65 mA, 70 hFE
(EN)
DIODES INC.
单晶体管 双极, 通用, PNP, 45 V, 150 MHz, 1 W, -1 A, 100 hFE
(EN)INFINEON
晶体管, MOSFET, P沟道, -390 mA, -20 V, 0.7 ohm, -4.5 V, -900 mV
(EN)
