规格：MSL MSL 1 -无限制,
STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, SOIC
(EN)
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率
(EN)ON SEMICONDUCTOR
单晶体管 双极, PNP, -45 V, 100 MHz, 225 mW, -100 mA, 270 hFE
(EN)
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, AEC-Q100, 单路PNP, -50 V, -100 mA, 10 kohm, 10 kohm, 1 电阻比率
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -180 mA, -50 V, 4.5 ohm, -10 V, -1.6 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 200 mA, 50 V, 3.5 ohm, 10 V, 1.2 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -2.4 A, -20 V, 100 mohm, -4.5 V, -950 mV
(EN)
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, PNP, -25 V, 100 MHz, 225 mW, -500 mA, 40 hFE
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 达林顿, NPN, 100 V, 4 MHz, 20 W, 8 A, 1000 hFE
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -2.8 A, -20 V, 0.067 ohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -1.3 A, -30 V, 180 mohm, -10 V, -2 V
(EN)INFINEON
晶体管, MOSFET, BRT, N沟道, 300 mA, 60 V, 1.6 ohm, 10 V, 2.1 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 310 mA, 60 V, 0.86 ohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm, 0.047 电阻比率
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 45 V, 100 MHz, 350 mW, 1 A, 160 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, 6.9 A, -30 V, 22 mohm, 10 V, 1.9 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 10.3 A, 60 V, 22 mohm, 10 V, 3 V
(EN)
MULTICOMP
单晶体管 双极, NPN, 40 V, 300 MHz, 625 mW, 200 mA, 300 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 40 V, 300 MHz, 225 mW, 600 mA, 40 hFE
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 160 V, 265 mW, 60 mA, 30 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 225 mW, 500 mA, 250 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0025 ohm, 10 V, 2.8 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 5.7 A, 30 V, 0.019 ohm, 4.5 V, 650 mV
(EN)
