规格：MSL MSL 1 -无限制,
VISHAY
双路场效应管, MOSFET, N和P沟道, 4.5 A, 20 V, 0.053 ohm, 4.5 V, 600 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 73 A, 40 V, 4.9 mohm, 10 V, 1.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16 A, 60 V, 47 mohm, 5 V, 3 V
(EN)
NEXPERIA
双极晶体管阵列, 通用, NPN, 45 V, 200 mW, 100 mA, 180 hFE, SOT-323
(EN)
VISHAY
晶体管, MOSFET, P沟道, -2.5 A, -30 V, 0.063 ohm, -10 V, -3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 2 A, 100 V, 0.23 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3 A, -12 V, 0.064 ohm, -4.5 V, -1.3 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 16 A, -12 V, 7 mohm, -4.5 V, -900 mV
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 1.5 A, 60 V, 0.07 ohm, 20 V, 3 V
(EN)
INFINEON
晶体管 双极-射频, NPN, 16 V, 5 GHz, 700 mW, 210 mA, 70 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0062 ohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 3.7 A, 30 V, 0.06 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 58 A, 40 V, 0.005 ohm, 10 V, 1.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 213 A, 25 V, 0.0008 ohm, 10 V, 1.6 V
(EN)INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 51 A, 100 V, 0.008 ohm, 10 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 114 A, 60 V, 0.0029 ohm, 10 V, 3.7 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, -45 V, 225 mW, -100 mA, 215 hFE
(EN)
MULTICOMP
单晶体管 双极, 高速开关, PNP, 40 V, 250 MHz, 625 mW, 200 mA, 100 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4 A, -30 V, 0.041 ohm, -10 V, -1.7 V
(EN)
VISHAY
晶体管, MOSFET, 汽车, N沟道, 32 A, 100 V, 0.021 ohm, 10 V, 3 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 6.5 A, 30 V, 29 mohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 11 A, -30 V, 0.0108 ohm, -10 V, -2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, JFET, JFET, -40 V, 200 μA, 1 mA, -1.5 V, SOT-23, JFET
(EN)
