规格：MSL MSL 1 -无限制,
ON SEMICONDUCTOR
单晶体管 双极, NPN, 45 V, 100 MHz, 300 mW, 500 mA, 160 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 3.4 A, -30 V, 0.105 ohm, -10 V, -1.8 V
(EN)
INFINEON
晶体管 双极-射频, NPN, 4.5 V, 25 GHz, 75 mW, 25 mA, 60 hFE
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 达林顿, PNP, -100 V, 1.75 W, -8 A, 12 hFE
(EN)
INFINEON
晶体管 双极-射频, AEC-Q101, NPN, 9 V, 14 GHz, 210 mW, 35 mA, 120 hFE
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, NPN和PNP执行, 50 V, 100 mA, 22 kohm, 22 kohm
(EN)
INFINEON
晶体管, MOSFET, N沟道, 71 A, 100 V, 10 mohm, 10 V, 1.85 V
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -8 A, -30 V, 24 mohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR
双极晶体管阵列, 双路N和P通道, 30 V, 380 mW, 100 mA, 420 hFE, SOT-363
(EN)
INFINEON
晶体管, MOSFET, N沟道, 14 A, 150 V, 0.18 ohm, 10 V, 5.5 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -6.6 A, -100 V, 480 mohm, -10 V, -4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 43 A, 60 V, 0.0126 ohm, 10 V, 4 V
(EN)
NEXPERIA
单晶体管 双极, NPN, PNP, 65 V, 100 MHz, 200 mW, 100 mA, 200 hFE
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 57 A, 100 V, 0.013 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 13.5 A, 30 V, 0.007 ohm, 10 V, 3 V
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -6 A, -40 V, 0.048 ohm, -4.5 V, -3 V
(EN)ON SEMICONDUCTOR
双极晶体管阵列, NPN, PNP, 65 V, 380 mW, 100 mA, 200 hFE, SOT-363
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0058 ohm, 10 V, 1.4 V
(EN)
NEXPERIA
单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 250 mW, 100 mA, 420 hFE
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, -60 V, 100 MHz, 2 W, -6 A, 70 hFE
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 45 V, 100 MHz, 330 mW, 800 mA, 60 hFE
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3.8 A, 100 V, 0.102 ohm, 10 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12 A, 60 V, 80 mohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, JFET, JFET, 35 V, 20 mA, 10 V, TO-92, JFET
(EN)
NEXPERIA
单晶体管 双极, NPN, 80 V, 180 MHz, 500 mW, 1 A, 100 hFE
(EN)
