规格：MSL MSL 1 -无限制,
NEXPERIA
晶体管, MOSFET, N沟道, 930 mA, 30 V, 0.38 ohm, 4.5 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 1.75 A, 100 V, 0.2 ohm, 10 V, 3 V
(EN)
ROHM
晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 22 kohm, 47 kohm, 0.46 电阻比率
(EN)
INFINEON
射频晶体管, NPN, 12V, SOT-23
(EN)
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm, 0.1 电阻比率
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -4.2 A, -20 V, 0.04 ohm, -4.5 V, -900 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 2.5 A, 30 V, 0.082 ohm, 10 V, 1.8 V
(EN)
NEXPERIA
单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 250 mW, 500 mA, 160 hFE
(EN)
INFINEON
晶体管 双极-射频, NPN, 12 V, 8 GHz, 580 mW, 80 mA, 70 hFE
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 400 V, 10 MHz, 15 W, 1 A, 30 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.8 A, 60 V, 0.088 ohm, 10 V, 2.5 V
(EN)
NEXPERIA
晶体管 双极-射频, NPN, 65 V, 100 MHz, 200 mW, 100 mA, 450 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 44 A, 100 V, 0.024 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, JFET, JFET, -25 V, 100 mA, 100 mA, 4.5 V, TO-92, JFET
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1.9 A, 55 V, 0.16 ohm, 10 V, 4 V
(EN)INFINEON
场效应管, MOSFET, N沟道, 600V, 0.021A, SOT-23-3
VISHAY
双路场效应管, MOSFET, 双P沟道, -4.5 A, -30 V, 0.052 ohm, -10 V
(EN)NEXPERIA
晶体管, MOSFET, P沟道, -200 mA, -30 V, 2.8 ohm, -4.5 V, -900 mV
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 4.7 A, 55 V, 50 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, BRT, NPN和PNP执行, 50 V, 100 mA, 47 kohm, 47 kohm, 1 电阻比率
(EN)ROHM
晶体管, MOSFET, N沟道, 100 mA, 30 V, 8 ohm, 4 V, 1.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 160 V, 100 MHz, 350 mW, 600 mA, 250 hFE
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 20 A, 40 V, 0.0072 ohm, 10 V, 1.7 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 150 mA, 100 V, 3.5 ohm, 10 V, 2 V
(EN)
