品牌：STMICROELECTRONICS,规格：MSL MSL 1 -无限制,
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 500 mA, 600 V, 8 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, SOIC
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 300 mA, 600 V, 15 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 500 mA, 600 V, 8 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 35 A, 60 V, 0.022 ohm, 2.5 V, 1.7 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3 A, 600 V, 1 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
单晶体管 双极, NPN, 80 V, 20 W, 8 A, 60 hFE
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 600 V, 2 ohm, 10 V, 2.3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12 A, 60 V, 80 mohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 1 A, 200 V, 1.1 ohm, 10 V, 2 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 2 A, 100 V, 0.23 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 1.5 A, 60 V, 0.07 ohm, 20 V, 3 V
(EN)STMICROELECTRONICS
单晶体管 双极, NPN, 65 V, 15 W, 6 A, 320 hFE
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.5 A, 800 V, 3.8 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
单晶体管 双极, PNP, 60 V, 130 MHz, 1.4 W, -3 A, 160 hFE
(EN)STMICROELECTRONICS
单晶体管 双极, 通用, NPN, 60 V, 130 MHz, 1.6 W, 3 A, 280 hFE
(EN)STMICROELECTRONICS
三端双向可控硅, 600 V, 35 mA, 1 W, 1.3 V, TO-252, 30 A
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1.5 A, 900 V, 4.1 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
双路场效应管, MOSFET, 双N沟道, 4 A, 60 V, 0.045 ohm, 10 V, 1.7 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 3.3 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 23 A, 100 V, 65 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 3 A, 100 V, 220 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 32 A, 55 V, 6.5 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
单晶体管 双极, PNP, -30 V, 100 MHz, 500 mW, -1.5 A, 560 hFE
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 4 A, 60 V, 0.07 ohm, 10 V, 2.8 V
(EN)
