品牌：STMICROELECTRONICS,规格：MSL -,
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 3 A, 500 V, 2.3 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
三端双向可控硅, 800 V, 16 A, TO-220AB, 35 mA, 1.3 V
(EN)
STMICROELECTRONICS
双极(BJT)达林顿晶体管, NPN, 1.2 kV, 40 W, 100 mA, 200 hFE
(EN)
STMICROELECTRONICS
单晶体管, IGBT, 80 A, 1.85 V, 468 W, 1.2 kV, TO-247, 3 引脚
(EN)
STMICROELECTRONICS
场效应管, MOSFET, N沟道, 60V, 16A, TO-220
(EN)STMICROELECTRONICS
单晶体管 双极, NPN, 60 V, 2 W, 1 A, 75 hFE
(EN)
STMICROELECTRONICS
三端双向可控硅, 600 V, 50 mA, 1 W, 1.5 V, RD-91, 250 A
(EN)
STMICROELECTRONICS
单晶体管 双极, NPN, 80 V, 1.6 W, 1 A, 25 hFE
(EN)STMICROELECTRONICS
三端双向可控硅, 600 V, 35 mA, 1 W, 1.3 V, TO-220AB, 30 A
(EN)
STMICROELECTRONICS
三端双向可控硅, 1.2 kV, 50 mA, 1 W, 1.3 V, TO-263
(EN)
STMICROELECTRONICS
单晶体管 双极, NPN, 45 V, 12.5 W, 1.5 A, 40 hFE
(EN)STMICROELECTRONICS
三端双向可控硅, 开关, 600 V, 10 mA, 100 mW, 1 V, SOT-223, 7.3 A
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 7.5 A, 600 V, 0.55 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 18 A, 600 V, 0.168 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
单晶体管, IGBT, 30 A, 1.85 V, 259 W, 1.2 kV, TO-247, 3 引脚
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 60 A, 300 V, 0.033 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
三端双向可控硅, 600 V, 35 mA, 1 W, 1.3 V, 80 A
(EN)
STMICROELECTRONICS
晶闸管, 400 V, 200 μA, 500 mA, 800 mA, TO-92, 3 引脚
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 20 A, 550 V, 250 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
单晶体管, IGBT, 20 A, 2.5 V, 60 W, 600 V, TO-220, 3 引脚
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 11 A, 600 V, 0.35 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 13 A, 600 V, 0.255 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
Power MOSFET, N Channel, 66 A, 600 V, 0.037 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 50 A, 60 V, 18 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
三端双向可控硅, 600 V, 35 mA, 1 V, TO-220AB, 270 A
(EN)
