品牌：STMICROELECTRONICS,规格：MSL -,
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 16 A, 60 V, 0.07 ohm, 10 V, 1 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.1 A, 900 V, 5 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 650 V, 1.2 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1.05 A, 900 V, 5 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
单晶体管 双极, NPN, 45 V, 3 MHz, 36 W, 4 A, 140 hFE
(EN)STMICROELECTRONICS
单晶体管 双极, NPN, 80 V, 50 W, 10 A, 60 hFE
(EN)
STMICROELECTRONICS
晶体管, 射频FET, 25 V, 2 A, 6 W, 1 GHz, SOT-89
(EN)
STMICROELECTRONICS
晶闸管, 600 V, 200 μA, 2.5 A, 4 A, TO-202, 3 引脚
(EN)
STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 2.25 W, 500 mA, 1000 hFE, DIP
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 26 A, 30 V, 0.0038 ohm, 10 V, 1 V
(EN)
STMICROELECTRONICS
双极晶体管阵列, 达林顿, 双NPN, 50 V, 500 mA, 1000 hFE, SOIC
(EN)
STMICROELECTRONICS
三端双向可控硅, 600 V, 1.5 V, TO-92, 9 A
(EN)
STMICROELECTRONICS
三端双向可控硅, 开关, 800 V, 10 mA, 10 W, 1 V, TO-252, 30 A
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 290 mohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 600 V, 0.86 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 6 A, 45 V, 0.06 ohm, 5 V, 500 mV
(EN)STMICROELECTRONICS
三端双向可控硅, 600 V, 5 mA, 1 W, 1.3 V, TO-220AB, 30 A
(EN)
STMICROELECTRONICS
单晶体管, IGBT, 6 A, 2.5 V, 20 W, 600 V, TO-220FP, 3 引脚
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 700 V, 1 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12 A, 550 V, 0.3 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 600 V, 0.86 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4.3 A, 800 V, 1.9 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 9 A, 300 V, 400 mohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 650 V, 1.2 ohm, 10 V, 3 V
(EN)
