品牌：STMICROELECTRONICS,规格：MSL -,
STMICROELECTRONICS
单晶体管, IGBT, 200 A, 1.2 V, 600 W, 600 V, ISOTOP, 4 引脚
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 10 A, 500 V, 520 mohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
晶体管, 射频FET, 125 V, 20 A, 389 W, 230 MHz, M174
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.23 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 29 A, 600 V, 0.092 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶闸管, 600 V, 50 μA, 900 mA, 4 A, TO-202, 3 引脚
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 24 A, 600 V, 0.11 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
三端双向可控硅, 600 V, 50 mA, 1 W, 1.3 V, TO-220AB, 100 A
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 12 A, 600 V, 0.26 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
单晶体管 双极, NPN, 400 V, 80 W, 5 A, 10 hFE
(EN)STMICROELECTRONICS
三端双向可控硅, 800 V, 35 mA, 1.3 V, TO-220AB, 120 A
(EN)STMICROELECTRONICS
三端双向可控硅, 600 V, 25 mA, 1 W, 1.5 V, 120 A
(EN)STMICROELECTRONICS
单晶体管 双极, 达林顿, NPN, 450 V, 250 W, 84 A, 120 hFE
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 60 A, 55 V, 5 mohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
(EN)
STMICROELECTRONICS
单晶体管 双极, NPN, 80 V, 40 W, 4 A, 750 hFE
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7.5 A, 200 V, 150 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
单晶体管, IGBT, 70 A, 1.7 V, 200 W, 600 V, TO-247, 3 引脚
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 29 A, 600 V, 0.097 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 19.5 A, 600 V, 0.15 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
三端双向可控硅, 700 V, 50 mA, 1 W, 1.5 V, TOP-3, 400 A
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 20 A, 200 V, 38 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 26 A, 250 V, 33 mohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 950 V, 3 ohm, 10 V, 4 V
(EN)
