品牌：STMICROELECTRONICS,规格：MSL -,
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3.5 A, 1 kV, 3.7 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
单晶体管 双极, 达林顿, NPN, 100 V, 33 W, 12 A, 1000 hFE
(EN)
STMICROELECTRONICS
双极晶体管
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 28 A, 600 V, 0.094 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
单晶体管, IGBT, 80 A, 1.85 V, 468 W, 1.2 kV, TO-247, 3 引脚
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 6.5 A, 600 V, 0.63 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4.2 A, 620 V, 1.28 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
三端双向可控硅, 700 V, 100 mA, 1 W, 1.5 V, TOP-3, 250 A
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 51 A, 600 V, 0.047 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 30 V, 0.0042 ohm, 10 V, 1 V
(EN)STMICROELECTRONICS
晶闸管, 600 V, 35 mA, 25 A, 40 A, TO-220AB, 3 引脚
(EN)
STMICROELECTRONICS
晶体管, IGBT, TO247
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 13 A, 600 V, 550 mohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.17 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
三端双向可控硅, 600 V, 1 W, 1 V, 160 A
(EN)STMICROELECTRONICS
单晶体管 双极, PNP, -80 V, 50 W, -10 A, 120 hFE
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 28 A, 600 V, 0.094 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 21 A, 500 V, 0.135 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
三端双向可控硅, 600 V, 10 mA, 1 W, 1.3 V, TO-220AB, 60 A
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 55 V, 8 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.37 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
单晶体管 双极, NPN, 450 V, 85 W, 5 A, 38 hFE
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 34 A, 600 V, 0.085 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 40 V, 0.0054 ohm, 10 V, 2 V
(EN)
STMICROELECTRONICS
三端双向可控硅, 600 V, 1 W, 1 V, 160 A
(EN)
