品牌：STMICROELECTRONICS,规格：MSL -,
STMICROELECTRONICS
晶闸管, 600 V, 200 μA, 2.5 A, 4 A, TO-202, 3 引脚
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 58 A, 650 V, 0.037 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 13 A, 600 V, 0.26 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
单晶体管 双极, NPN, 450 V, 125 W, 15 A, 8 hFE
(EN)
STMICROELECTRONICS
单晶体管 双极, 达林顿, PNP, -60 V, 2 W, 5 A, 1000 hFE
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.1 A, 900 V, 6.5 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.65 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
三端双向可控硅, 600 V, 25 mA, 500 mW, 1.3 V, TO-220AB, 35 A
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 45 A, 550 V, 100 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
单晶体管 双极, NPN, 250 V, 180 W, 60 A, 9 hFE
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 18 A, 60 V, 40 mohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
三端双向可控硅, 800 V, 35 mA, 1.3 V, TOP-3, 250 A
(EN)
STMICROELECTRONICS
双向晶闸管, 600V, 40A, RD91
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 600 V, 2 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
单晶体管 双极, NPN, 700 V, 125 W, 8 A, 5 hFE
(EN)STMICROELECTRONICS
单晶体管 双极, 达林顿, NPN, 350 V, 100 W, 4 A, 1500 hFE
(EN)
STMICROELECTRONICS
三端双向可控硅, 600 V, 50 mA, 1 W, 1.3 V, TO-252, 80 A
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 14 A, 600 V, 0.18 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
三端双向可控硅, 700 V, 50 mA, 1 W, 1.5 V, RD-91, 400 A
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 6.5 A, 1 kV, 1.6 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
三端双向可控硅, 600 V, DIP, 105 A
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 30 A, 500 V, 120 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 250 mohm, 30 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 9.5 A, 900 V, 400 mohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
三端双向可控硅, 600 V, 50 mA, 1 W, 1.3 V, TO-220AB, 160 A
(EN)
