INTEGRATED SILICON SOLUTION (ISSI)
存储芯片, SRAM, 128K X 8, 5V, 35NS, 32SOP
ROHM
EEPROM, 1 Mbit, 128K x 8位, 1 MHz, 串行 I2C, SOP, 8 引脚
ROHM
EEPROM, AEC-Q100, 8 Kbit, 512 x 16位, 1.25 MHz, 3线, SOP, 8 引脚
ROHM
EEPROM, AEC-Q100, 16 Kbit, 2K x 8位, 10 MHz, SPI, SOP, 8 引脚
ROHM
EEPROM, AEC-Q100, 2 Kbit, 256 x 8位, 10 MHz, SPI, SOP, 8 引脚
ROHM
EEPROM, 256 Kbit, 32K x 8位, 1 MHz, 串行 I2C, SOP, 8 引脚
ROHM
EEPROM, AEC-Q100, 16 Kbit, 1K x 16位, 1.25 MHz, 3线, SOP, 8 引脚
ROHM
EEPROM, AEC-Q100, 2 Kbit, 256 x 8位, 400 kHz, I2C, SOP, 8 引脚
ROHM
EEPROM, AEC-Q100, 2 Kbit, 128 x 16位, 1.25 MHz, 3线, SOP, 8 引脚
TEXAS INSTRUMENTS
缓冲器/线路驱动器, 74LVC541, 1.65V至3.6V, SOP-20
ROHM
EEPROM, AEC-Q100, 16 Kbit, 2K x 8位, 400 kHz, I2C, SOP, 8 引脚
ROHM
EEPROM, 8 Kbit, 1K x 8位, 400 kHz, 串行 I2C, SOP, 8 引脚