规格：电压 @ Rds测量 -4.5V,
ON SEMICONDUCTOR
Dual MOSFET, Dual P Channel, -880 mA, -20 V, 0.215 ohm, -4.5 V, -1.2 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -20V, -4.5A, 8-SOIC
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 3.2 A, -20 V, 0.07 ohm, -4.5 V, -720 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 2 A, -12 V, 0.084 ohm, -4.5 V, -700 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -12 A, -20 V, 0.015 ohm, -4.5 V, -1.2 V
(EN)
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, 双P沟道, -2 A, -20 V, 0.15 ohm, -4.5 V, -1 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -1.5 A, -20 V, 0.092 ohm, -4.5 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -19.2 A, -30 V, 0.0127 ohm, -4.5 V, -2.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.4 A, -20 V, 0.036 ohm, -4.5 V, -800 mV
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双P沟道, -1.2 A, -20 V, 80 mohm, -4.5 V, -700 mV
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -15A, -20V, 8-SOIC
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, 700 mA, -12 V, 0.221 ohm, -4.5 V, -600 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -140 mA, -20 V, 8 ohm, -4.5 V, 900 mV
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -950 mA, -20 V, 150 mohm, -4.5 V, -1 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双P沟道, -500 mA, -20 V, 1.02 ohm, -4.5 V, -700 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, -6.9 A, -20 V, 0.026 ohm, -4.5 V, -400 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 6 A, -12 V, 26 mohm, -4.5 V, -500 mV
(EN)
ROHM
晶体管, MOSFET, P沟道, -3 A, -12 V, 0.028 ohm, -4.5 V, -300 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4.5 A, -20 V, 0.039 ohm, -4.5 V, -1 V
(EN)
VISHAY
晶体管, P沟道
(EN)VISHAY
晶体管, MOSFET, P沟道, -8 A, -20 V, 0.02 ohm, -4.5 V, -1.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -460 mA, -25 V, 0.87 ohm, -4.5 V, -860 mV
(EN)VISHAY
晶体管, MOSFET, P沟道, -5.9 A, -20 V, 0.0265 ohm, -4.5 V, -1 V
(EN)
