规格：电压 @ Rds测量 -4.5V,
DIODES INC.
晶体管, MOSFET, AEC-Q101, P沟道, -820 mA, -20 V, 0.5 ohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2.4 A, -20 V, 0.07 ohm, -4.5 V, -0.72 V
(EN)
VISHAY
场效应管, MOSFET晶体管
(EN)
VISHAY
MOSFET, P CHANNEL, -60V, -190mA, SC-89-6
(EN)
NEXPERIA
场效应管, MOSFET, P 通道, -20V, -3.9A, 3-SOT-23
(EN)
INFINEON
晶体管, MOSFET, P沟道, -12 A, -20 V, 0.0067 ohm, -4.5 V, -900 mV
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双P沟道, -1.6 A, -20 V, 0.056 ohm, -4.5 V, -800 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -4.5 A, -20 V, 0.03 ohm, -4.5 V, -1.5 V
(EN)
INTERNATIONAL RECTIFIER
P CHANNEL POWER MOSFET, HEXFET, -20V, -4.3A, SOT-23
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -10 A, -20 V, 0.0085 ohm, -4.5 V, -600 mV
(EN)
VISHAY
MOSFET, P CHANNEL, -40V, -8.7A, SOIC-8
(EN)
VISHAY
晶体管, MOSFET, P沟道, -900 mA, -8 V, 0.28 ohm, -4.5 V, -400 mV
(EN)
ROHM
晶体管, MOSFET, AEC-Q101, P沟道, -2.5 A, -20 V, 0.07 ohm, -4.5 V, -2 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -4.3 A, -20 V, 0.042 ohm, -4.5 V, -1.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -2.2 A, -20 V, 0.1 ohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, 2.5 A, -12 V, 90 mohm, -4.5 V, 700 mV
(EN)VISHAY
晶体管, MOSFET, P沟道, -5.8 A, -8 V, 0.028 ohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, P CHANNEL, -12V, 0.014OHM, -10A, MICROFET-6
(EN)
VISHAY
MOSFET, P CHANNEL, -60V, -190mA, SOT-416-3
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3 A, -12 V, 0.054 ohm, -4.5 V, -1.4 V
(EN)
RENESAS
晶体管, MOSFET, P沟道, -2.1 A, -20 V, 0.142 ohm, -4.5 V
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, P Channel, -4.8 A, -20 V, 21 mohm, -4.5 V, -1.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 760 mA, -20 V, 0.26 ohm, -4.5 V, -450 mV
(EN)VISHAY
双路场效应管, MOSFET, 双P沟道, -4 A, -20 V, 48 mohm, -4.5 V, -1.4 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -6 A, -20 V, 0.032 ohm, -4.5 V, -400 mV
(EN)
