规格：电压 @ Rds测量 -4.5V,
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 3.1 A, -20 V, 0.058 ohm, -4.5 V, -950 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.7 A, -8 V, 52 mohm, -4.5 V, -1 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -5.4 A, -12 V, 0.029 ohm, -4.5 V, -650 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, -3.7 A, -20 V, 0.05 ohm, -4.5 V, -550 mV
(EN)
INFINEON
双路场效应管, MOSFET, 双P沟道, -9 A, -20 V, 0.018 ohm, -4.5 V, -1 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双P沟道, -410 mA, -30 V, 1.2 ohm, -4.5 V, -700 mV
(EN)VISHAY
晶体管, MOSFET, P沟道, -190 mA, -60 V, 4 ohm, -4.5 V, -3 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -6 A, -20 V, 0.029 ohm, -4.5 V, -900 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -150 mA, -20 V, 2 ohm, -4.5 V, -700 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, -16 A, -12 V, 0.007 ohm, -4.5 V, -900 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -1.8 A, -12 V, 0.097 ohm, -4.5 V, -650 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, -4.3 A, -12 V, 0.05 ohm, -4.5 V, -550 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 5.8 A, -20 V, 0.026 ohm, -4.5 V, -1 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -8.7 A, -40 V, 0.011 ohm, -4.5 V, -3 V
(EN)
INFINEON
双路场效应管, MOSFET, 双P沟道, 4.2 A, -20 V, 0.049 ohm, -4.5 V, -700 mV
(EN)
NEXPERIA
晶体管, MOSFET, 沟, P沟道, -1.2 A, -20 V, 0.17 ohm, -4.5 V, -700 mV
(EN)
VISHAY
MOSFET, DUAL P CHANNEL, -40V, -6A, POWERPAK 1212-8
(EN)
VISHAY
场效应管, MOSFET, P沟道, -3A, -12V, 750mW
(EN)
VISHAY
晶体管, MOSFET, P沟道, -60 A, -20 V, 0.0024 ohm, -4.5 V, -1 V
(EN)INTERNATIONAL RECTIFIER
功率场效应管, MOSFET, P沟道, HEXFET, -20V, -2.6A, SOT-23
(EN)INFINEON
双路场效应管, MOSFET, 双P沟道, -1.7 A, -20 V, 0.27 ohm, -4.5 V, -700 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -1 A, -20 V, 300 mohm, -4.5 V, -600 mV
(EN)NEXPERIA
晶体管, MOSFET, P沟道, -5.3 A, -20 V, 0.03 ohm, -4.5 V, -700 mV
(EN)INFINEON
双路场效应管, MOSFET, 双P沟道, -4.3 A, -20 V, 0.09 ohm, -4.5 V, -700 mV
(EN)
