规格：电压 @ Rds测量 -4.5V,
NEXPERIA
双路场效应管, MOSFET, 双P沟道, -4.5 A, -20 V, 0.058 ohm, -4.5 V, -700 mV
(EN)
ROHM
晶体管, MOSFET, P沟道, -2.5 A, -12 V, 0.044 ohm, -4.5 V, -300 mV
(EN)
ROHM
晶体管, MOSFET, P沟道, -10 A, -20 V, 0.018 ohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 5.5 A, -20 V, 33 mohm, -4.5 V, -700 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, -3.7 A, -20 V, 0.05 ohm, -4.5 V, -550 mV
(EN)
ROHM
晶体管, MOSFET, P沟道, -2 A, -20 V, 0.1 ohm, -4.5 V, -2 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -3 A, -12 V, 0.044 ohm, -4.5 V, -1 V
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -4.7 A, -20 V, 0.031 ohm, -4.5 V, -400 mV
(EN)ROHM
晶体管, MOSFET, P沟道, -2 A, -12 V, 0.075 ohm, -4.5 V, -1 V
(EN)ROHM
晶体管, MOSFET, P沟道, -200 mA, -20 V, 0.8 ohm, -4.5 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -60 A, -30 V, 0.0072 ohm, -4.5 V, -1.6 V
(EN)
ROHM
双路场效应管, MOSFET, 双P沟道, -5.5 A, -12 V, 0.015 ohm, -4.5 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -6 A, -12 V, 26 mohm, -4.5 V, -400 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -4.7 A, -20 V, 39 mohm, -4.5 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -12 A, -12 V, 0.024 ohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.6 A, -20 V, 0.073 ohm, -4.5 V, -700 mV
(EN)ROHM
晶体管, MOSFET, P沟道, -100 mA, -20 V, 2.5 ohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 460 mA, -25 V, 1.1 ohm, -4.5 V, -860 mV
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -2.8 A, -20 V, 0.048 ohm, -4.5 V, -750 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, 6.7 A, -20 V, 40 mohm, -4.5 V, 700 mV
(EN)ROHM
晶体管, MOSFET, P沟道, -2 A, -20 V, 0.1 ohm, -4.5 V, -2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 2 A, -20 V, 110 mohm, -4.5 V, -800 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, 2A, SuperSOT, 整卷
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.7 A, -8 V, 0.039 ohm, -4.5 V, -1 V
(EN)
