规格：电压 @ Rds测量 -4.5V,
DIODES INC.
晶体管, MOSFET, P沟道, -4.6 A, -20 V, 0.029 ohm, -4.5 V, 960 mV
(EN)
INFINEON
双路场效应管, MOSFET, 双P沟道, 9 A, -20 V, 18 mohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -6.5 A, -20 V, 0.026 ohm, -4.5 V, -700 mV
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -600 mA, -20 V, 0.7 ohm, -4.5 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -12 A, -20 V, 0.025 ohm, -4.5 V, -400 mV
(EN)
VISHAY
晶体管, P沟道
(EN)
VISHAY
晶体管, MOSFET, P沟道, -29.7 A, -20 V, 0.012 ohm, -4.5 V, -400 mV
(EN)INFINEON
晶体管, MOSFET, P沟道, -6.7 A, -20 V, 0.04 ohm, -4.5 V, -700 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -3 A, -20 V, 0.027 ohm, -4.5 V, -800 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -3 A, -20 V, 66 mohm, -4.5 V, -900 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -3.9 A, -20 V, 0.08 ohm, -4.5 V, -450 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 150 mA, -20 V, 8 ohm, -4.5 V, -1 V
(EN)
VISHAY
MOSFET, P CHANNEL, -20V, -60A, POWERPAK SO-8
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -11 A, -20 V, 14 mohm, -4.5 V, -830 mV
(EN)
ROHM
晶体管, MOSFET, P沟道, -100 mA, -20 V, 2.5 ohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -3.6 A, -20 V, 0.04 ohm, -4.5 V, -500 mV
(EN)VISHAY
晶体管, MOSFET, P沟道, -14 A, -20 V, 0.006 ohm, -4.5 V, -400 mV
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -4.1 A, -20 V, 0.048 ohm, -4.5 V, -1 V
(EN)VISHAY
双路场效应管, MOSFET, 双P沟道, -4 A, -20 V, 0.048 ohm, -4.5 V, -1.4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -3.5 A, -20 V, 130 mohm, -4.5 V, -600 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -3.5 A, -12 V, 0.066 ohm, -4.5 V, -800 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.4 A, -20 V, 55 mohm, -4.5 V, -1 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -5.7 A, -20 V, 0.027 ohm, -4.5 V, -1 V
(EN)
