规格：电压 @ Rds测量 30V,
INFINEON
晶体管, MOSFET, N沟道, 130 A, 200 V, 0.008 ohm, 30 V, 5 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 250 mA, 800 V, 13 ohm, 30 V, 3.75 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 1.5 kV, 5 ohm, 30 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 171 A, 150 V, 0.0048 ohm, 30 V, 5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 290 mohm, 30 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 250 mohm, 30 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1.75 A, 1 kV, 2.7 ohm, 30 V, 3.75 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7 A, 500 V, 0.3 ohm, 30 V, 3.75 V
(EN)
