规格：电压 @ Rds测量 20V,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 14 A, -40 V, 0.036 ohm, 20 V, -1.6 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 6.5 A, 60 V, 0.033 ohm, 20 V, 2.4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 7.5 A, 30 V, 0.018 ohm, 20 V, 1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 34 A, 30 V, 1.5 mohm, 20 V, 1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 40V, 15.2A
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 1.5 A, 60 V, 0.07 ohm, 20 V, 3 V
(EN)
VISHAY
N CHANNEL MOSFET, 150V, 3.4A, POWERPAK 1212
(EN)
INFINEON
场效应管, MOSFET
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V, 4.5A, TO-236
(EN)
VISHAY
场效应管, MOSFET, N沟道, 75V, 60A, SOIC-8
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0033 ohm, 20 V, 4 V
(EN)VISHAY
场效应管, MOSFET, P沟道, -60V, 5A, SOIC
(EN)VISHAY
场效应管, MOSFET, P沟道, -60V, 5.7A, POWERPAK
(EN)VISHAY
场效应管, MOSFET, N沟道, 60V, 6A, POWERPAK
(EN)VISHAY
晶体管, 双N沟道
(EN)
VISHAY
晶体管, N沟道, 12A, 20V, 3.5W
(EN)
VISHAY
场效应管, MOSFET, N沟道, 150V, 4.8A, SOIC
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, P沟道
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 2.6 A, -60 V, 170 mohm, 20 V, -4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
N CHANNEL MOSFET, 40V, 28A, TO-252
(EN)
VISHAY
场效应管, MOSFET, P沟道, -60V, 19A, TO-252
(EN)INFINEON
晶体管, MOSFET, N沟道, 62 A, 150 V, 0.0103 ohm, 20 V, 5 V
(EN)VISHAY
晶体管, N沟道
(EN)
INFINEON
晶体管, MOSFET, N沟道, 293 A, 60 V, 1.5 mohm, 20 V, 4 V
(EN)VISHAY
场效应管, MOSFET, N沟道, 30V, 4A, TO-236
(EN)
