VISHAY
场效应管, MOSFET, N沟道与P沟道, 40V, 6.8A, SOIC-8
INFINEON
功率场效应管, MOSFET, N沟道, 6.8 A, 600 V, 0.9 ohm, 10 V, 3 V
NEXPERIA
晶体管, MOSFET, N沟道, 6.8 A, 20 V, 0.016 ohm, 4.5 V, 650 mV
VISHAY
双路场效应管, MOSFET, N和P沟道, 6.8 A, 40 V, 29.5 mohm, 10 V, 1.4 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 6.8 A, -30 V, 0.03 ohm, 25 V, -2.1 V
INFINEON
晶体管, MOSFET, P沟道, 6.8 A, -100 V, 480 mohm, -10 V, -4 V
INFINEON
双路场效应管, MOSFET, 双路N和P通道, 6.8 A, 30 V, 0.022 ohm, 10 V, 1.8 V
VISHAY
晶体管, MOSFET, N沟道, 6.8 A, 100 V, 51 mohm, 10 V, 2 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 6.8 A, -30 V, 0.03 ohm, 25 V, -2.1 V
INFINEON
功率场效应管, MOSFET, N沟道, 6.8 A, 650 V, 0.47 ohm, 10 V, 3 V
INFINEON
功率场效应管, MOSFET, N沟道, 6.8 A, 650 V, 0.47 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, P沟道, 6.8 A, -100 V, 480 mohm, -10 V, -4 V
NEXPERIA
晶体管, MOSFET, N沟道, 6.8 A, 20 V, 0.016 ohm, 4.5 V, 650 mV