规格：电流, Id 连续 -4.7A,
VISHAY
晶体管, MOSFET, P沟道, -4.7 A, -150 V, 0.91 ohm, -10 V, -3 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -4.7 A, -20 V, 0.054 ohm, -4.5 V, -900 mV
(EN)
VISHAY
场效应管, MOSFET, P沟道, -60V, 4.7A, SOIC
(EN)
VISHAY
场效应管, MOSFET, P沟道, -20V, 4.7A TO-236
(EN)
VISHAY
晶体管, MOSFET, P沟道, -4.7 A, -60 V, 0.1 ohm, -10 V, -3 V
(EN)
TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -4.7 A, -20 V, 0.031 ohm, -4.5 V, -400 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -4.7 A, -20 V, 39 mohm, -4.5 V, -1 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -20V, 4.7A TO-236, 整卷
(EN)VISHAY
晶体管, MOSFET, P沟道, -4.7 A, -20 V, 39 mohm, -4.5 V, -1 V
(EN)
