规格：电流, Id 连续 31A,
INFINEON
晶体管, MOSFET, P沟道, 31 A, -55 V, 65 mohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 31 A, 30 V, 0.0065 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 31 A, 40 V, 13.8 mohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 31 A, 100 V, 0.034 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 31 A, -55 V, 60 mohm, -10 V, -4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 31 A, 650 V, 0.09 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 31 A, 100 V, 0.031 ohm, 5 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 31 A, 100 V, 39 mohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 31 A, 650 V, 0.09 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 31 A, 200 V, 82 mohm, 10 V, 5.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 31 A, 200 V, 75 mohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 31 A, 200 V, 0.06 ohm, 10 V, 5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 31 A, 500 V, 180 mohm, 10 V, 5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 31 A, 600 V, 99 mohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
INFINEON
晶体管, MOSFET, N沟道, 31 A, 100 V, 39 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 31 A, 200 V, 82 mohm, 10 V, 5.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 31 A, 100 V, 0.034 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 31 A, 30 V, 1.6 mohm, 10 V, 1.7 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 31 A, 1.2 kV, 0.08 ohm, 18 V, 5.6 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 31 A, 30 V, 1.6 mohm, 10 V, 1.7 V
(EN)
