INTERNATIONAL RECTIFIER
场效应管, MOSFET
INFINEON
双路场效应管, MOSFET, N和P沟道, 2.4 A, 20 V, 0.085 ohm, 4.5 V, 700 mV
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 3.3 ohm, 10 V, 3.75 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.4 A, 30 V, 0.045 ohm, 10 V, 1 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 3.3 ohm, 10 V, 3.75 V
VISHAY
场效应管, MOSFET, N沟道
DIODES INC.
晶体管, MOSFET, 低电压, N沟道, 2.4 A, 20 V, 100 mohm, 4.5 V, 1 V
VISHAY
晶体管, MOSFET, N沟道, 2.4 A, 50 V, 100 mohm, 10 V, 4 V
VISHAY
MOSFET, N CHANNEL, 500V, 2.4A, TO-252-3
INFINEON
双路场效应管, MOSFET, 双N沟道, 2.4 A, 30 V, 135 mohm, 10 V, 1 V
VISHAY
晶体管, MOSFET, N沟道, 2.4 A, 500 V, 3 ohm, 10 V, 4 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 3.3 ohm, 10 V, 3.75 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 3.3 ohm, 10 V, 3.75 V
TAIWAN SEMICONDUCTOR
晶体管, MOSFET, 低电压, N沟道, 2.4 A, 20 V, 65 mohm, 4.5 V, 450 mV
INFINEON
场效应管, MOSFET
INFINEON
功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 1.8 ohm, 10 V, 3 V
INFINEON
场效应管, MOSFET
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 3.6 ohm, 10 V, 3.75 V
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 600V, 2.4A, TO-220FP
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 2.4 A, -20 V, 52 mohm, -4.5 V, -800 mV
INFINEON
功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 1.8 ohm, 10 V, 3 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 2.4 A, 20 V, 0.085 ohm, 4.5 V, 700 mV
INFINEON
双路场效应管, MOSFET, 双N沟道, 2.4 A, 20 V, 0.085 ohm, 4.5 V, 700 mV