ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 4.5 A, 60 V, 55 mohm, 10 V, 2.2 V
双路场效应管, MOSFET, 双P沟道, 6.9 A, -30 V, 22 mohm, 10 V, 1.9 V
VISHAY
晶体管, MOSFET, N沟道, 10.3 A, 60 V, 22 mohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0025 ohm, 10 V, 2.8 V
晶体管, MOSFET, P沟道, 13.7 A, -8 V, 0.0075 ohm, -4.5 V, -0.45 V
晶体管, MOSFET, N沟道, 13 A, 150 V, 0.074 ohm, 10 V, 3 V
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0054 ohm, 10 V, 1.7 V
晶体管, MOSFET, N沟道, 16 A, 60 V, 0.0056 ohm, 10 V, 4 V
晶体管, MOSFET, N沟道, 23 A, 80 V, 0.0275 ohm, 10 V, 2.8 V
晶体管, MOSFET, P沟道, -10.8 A, -40 V, 0.011 ohm, -10 V, -1.6 V
晶体管, MOSFET, N沟道, 20 A, 30 V, 12.5 mohm, 10 V, 1 V
晶体管, MOSFET, P沟道, 8 A, -20 V, 24 mohm, -4.5 V, -700 mV
双路场效应管, MOSFET, 双N沟道, 30 A, 30 V, 0.0058 ohm, 10 V, 2 V
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -35 A, -20 V, 0.0077 ohm, -4.5 V, 900 mV
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.006 ohm, 10 V, 3 V
场效应管, MOSFET, P沟道, -100V, 28A, SOIC
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.00075 ohm, 10 V, 2.2 V
晶体管, MOSFET, P沟道, 20 A, -30 V, 0.0038 ohm, -10 V, 1.8 V
场效应管, MOSFET, P沟道, -30V, 11mA
晶体管, MOSFET, N沟道, 8 A, 60 V, 20 mohm, 10 V, 2.5 V
双路场效应管, MOSFET, 双N沟道, 6.5 A, 60 V, 0.033 ohm, 20 V, 2.4 V
双路场效应管, MOSFET, 双N沟道, 6 A, 30 V, 0.019 ohm, 10 V, 1.9 V
双路场效应管, MOSFET, 双N沟道, 4.7 A, 55 V, 50 mohm, 10 V, 1 V
双路场效应管, MOSFET, 双N沟道, 20 A, 40 V, 0.0072 ohm, 10 V, 1.7 V
双路场效应管, MOSFET, 双N沟道, 7.5 A, 30 V, 0.018 ohm, 20 V, 1.6 V
(EN)
