ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, P沟道, -40V, 8.4mA

MULTICOMP

双极晶体管

DIODES INC.

二极管 小信号, 双共阴极, 85 V, 215 mA, 1.25 V, 3 μs, 4 A

ON SEMICONDUCTOR

双极性晶体管

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 7.5 A, 500 V, 800 mohm, 10 V, 4 V

RENESAS

晶体管, MOSFET, P沟道, -3.3 A, -30 V, 0.054 ohm, -10 V

NEXPERIA

晶体管, MOSFET, N沟道, 3.2 A, 30 V, 0.044 ohm, 10 V, 1.4 V

INTERNATIONAL RECTIFIER

P CHANNEL POWER MOSFET, HEXFET, -20V, -4.3A, SOT-23

INFINEON

功率场效应管, MOSFET, N沟道, 1.7 A, 600 V, 2.97 ohm, 10 V, 3 V

DIODES INC.

二极管 小信号, 单, 250 V, 400 mA, 1 V, 50 ns, 1 A

ON SEMICONDUCTOR

单晶体管 双极, NPN, 15 V, 300 mW, 200 mA, 120 hFE

INFINEON

功率场效应管, MOSFET, N沟道, 47 A, 650 V, 70 mohm, 10 V, 3 V

MULTICOMP

单晶体管 双极, PNP, -45 V, 100 MHz, 250 mW, -100 mA, 420 hFE

VISHAY

场效应管, MOSFET, P沟道, -3.2A, -30V, 1.25W

DIODES INC.

单晶体管 双极, NPN, 60 V, 150 MHz, 350 mW, 1 A, 100 hFE

ON SEMICONDUCTOR

单晶体管 双极, 音频, PNP, -150 V, 30 MHz, 50 W, -8 A, 40 hFE

NEXPERIA

DIODE, ZENER, 33V, 250mW, SOT-23-3

DIODES INC.

晶体管, MOSFET, N沟道, 1.6 A, 60 V, 0.092 ohm, 10 V, 3 V

DIODES INC.

单晶体管 双极, NPN, 40 V, 300 MHz, 200 mW, 200 mA, 100 hFE

INFINEON

晶体管, MOSFET, N沟道, 9 A, 550 V, 0.36 ohm, 10 V, 3 V

TOSHIBA

功率场效应管, MOSFET, N沟道, 3.5 A, 600 V, 1.7 ohm, 10 V, 2.4 V

NEXPERIA

单晶体管 双极, NPN, 160 V, 250 mW, 300 mA, 80 hFE

INFINEON

晶体管, MOSFET, N沟道, 6.6 A, 500 V, 0.86 ohm, 13 V, 3 V

MULTICOMP

单晶体管 双极, NPN, 160 V, 300 MHz, 625 mW, 600 mA, 80 hFE

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 68 A, 30 V, 0.0078 ohm, 10 V, 1.9 V