VISHAY

单管二极管 齐纳, 5.1 V, 300 mW, SOT-23, 5 %, 3 引脚, 150 °C

MULTICOMP

单晶体管 双极, NPN, 45 V, 200 MHz, 625 mW, 800 mA, 400 hFE

STMICROELECTRONICS

单晶体管 双极, PNP, 80 V, 1.25 W, 1.5 A, 40 hFE

NEXPERIA

单晶体管 双极, 开关, NPN, 40 V, 300 MHz, 200 mW, 200 mA, 100 hFE

TAIWAN SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 1 A, 600 V, 8 ohm, 10 V, 3.5 V

ON SEMICONDUCTOR/FAIRCHILD

小信号二极管, 100V 200mA SOT-23

ON SEMICONDUCTOR

双极晶体管

ON SEMICONDUCTOR/FAIRCHILD

二极管 小信号, 双系列, 100 V, 200 mA, 1 V, 4 ns, 2 A

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 12 A, 60 V, 0.06 ohm, 10 V, 2 V

STMICROELECTRONICS

单晶体管 双极, PNP, -300 V, 20.8 W, -500 mA, 240 hFE

ON SEMICONDUCTOR

单晶体管 双极, 音频, NPN, 350 V, 30 MHz, 50 W, 4 A, 100 hFE

INFINEON

场效应管, MOSFET, N沟道, 40V, 195A, TO-220AB-3

ON SEMICONDUCTOR

单晶体管 双极, NPN, 30 V, 100 MHz, 310 mW, 1 A, 300 hFE

ON SEMICONDUCTOR

BIPOLAR TRANSISTOR, NPN, 60V SOT-23

TEXAS INSTRUMENTS

晶体管, MOSFET, NexFET™, N沟道, 170 A, 60 V, 0.0033 ohm, 10 V, 1.8 V

NEXPERIA

单晶体管 双极, NPN, 30 V, 180 MHz, 390 mW, 2.6 A, 500 hFE

NEXPERIA

单晶体管 双极, PNP, 40 V, 200 MHz, 300 mW, 2 A, 450 hFE

STMICROELECTRONICS

双向晶闸管, 600V, 40A, TOP-3

NEXPERIA

双极晶体管阵列, 双PNP, -60 V, 250 mW, -500 mA, 2000 hFE, SOT-23

INFINEON

晶体管 双极-射频, NPN, 4.5 V, 25 GHz, 160 mW, 35 mA, 95 hFE

VISHAY

晶体管, MOSFET, N沟道, 20 A, 200 V, 180 mohm, 10 V, 4 V

STMICROELECTRONICS

三端双向可控硅, 600 V, 50 mA, 1 W, 1.5 V, TOP-3, 250 A

INFINEON

晶体管, MOSFET, N沟道, 39 A, 80 V, 0.0225 ohm, 10 V, 2.5 V

INFINEON

晶体管 双极-射频, NPN, 15 V, 5 GHz, 280 mW, 45 mA, 70 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, 350 mA, -20 V, 0.5 ohm, -4.5 V, -1 V