INFINEON

功率场效应管, MOSFET, N沟道, 20 A, 600 V, 190 mohm, 10 V, 4.5 V

DIODES INC.

二极管 小信号, 开关, 单, 85 V, 150 mA, 1.25 V, 3 μs, 4 A

VISHAY

晶体管, MOSFET, N沟道, 20 A, 500 V, 0.21 ohm, 10 V, 5 V

VISHAY

晶体管, MOSFET, N沟道, 3.1 A, 100 V, 0.102 ohm, 10 V, 3 V

MULTICOMP

双极晶体管

INFINEON

单晶体管, IGBT, 20 A, 3.1 V, 100 W, 1.2 kV, TO-247AC, 3 引脚

ON SEMICONDUCTOR

单晶体管 双极, NPN, 60 V, 3 MHz, 40 W, 3 A, 10 hFE

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, 达林顿, NPN, 350 V, 10 MHz, 2 W, 1 A, 150 hFE

DIODES INC.

晶体管, MOSFET, P沟道, -1.5 A, -20 V, 0.092 ohm, -4.5 V, -1 V

ON SEMICONDUCTOR

单晶体管 双极, PNP, -60 V, 40 W, -4 A, 750 hFE

NEXPERIA

单晶体管 双极, NPN, 45 V, 100 MHz, 250 mW, 100 mA, 420 hFE

VISHAY

单管二极管 齐纳, 10 V, 300 mW, SOT-23, 5 %, 3 引脚, 150 °C

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 39 A, 200 V, 66 mohm, 10 V, 5 V

INFINEON

晶体管, MOSFET, P沟道, 40 A, -100 V, 60 mohm, -10 V, -4 V

INTERNATIONAL RECTIFIER

场效应管, MOSFET

MICROCHIP

晶体管, MOSFET, N沟道, 100 mA, 450 V, 60 ohm, 0 V

MULTICOMP

单晶体管 双极, 通用, PNP, -60 V, 3 MHz, 65 W, -6 A, 30 hFE

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 2.8 A, 600 V, 2 ohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, P沟道, -18.7 A, -60 V, 0.101 ohm, -10 V, -3 V

STMICROELECTRONICS

三端双向可控硅, 800 V, 50 mA, 1 W, 1.3 V, TO-220AB, 160 A

NEXPERIA

单管二极管 齐纳, 3.3 V, 250 mW, SOT-23, 5 %, 3 引脚, 150 °C

INFINEON

晶体管, MOSFET, P沟道, -50 A, -40 V, 0.0092 ohm, -10 V, -3 V

VISHAY

场效应管, MOSFET, N沟道

VISHAY

晶体管, MOSFET, P沟道, -50 A, -40 V, 6.7 mohm, -10 V, -1 V

MICROCHIP

MOSFET, N CHANNEL, 300V, 0.2A, TO-243AA-3