ROHM
单晶体管 双极, PNP, -50 V, 140 MHz, 150 mW, -150 mA, 120 hFE
ROHM
晶体管, MOSFET, P沟道, -16 A, -45 V, 0.035 ohm, -10 V, -3 V
ROHM
单晶体管 双极, PNP, -60 V, 400 MHz, 200 mW, -500 mA, 120 hFE
ROHM
晶体管, MOSFET, N沟道, 2.5 A, 45 V, 0.095 ohm, 4.5 V, 1.5 V
ROHM
Silicon Carbide Power MOSFET, N Channel, 30 A, 650 V, 0.08 ohm, 18 V, 5.6 V
ROHM
晶体管, MOSFET, N沟道, 500 mA, 30 V, 0.4 ohm, 4.5 V, 1.5 V
ROHM
晶体管, MOSFET, N沟道, 8 A, 60 V, 0.057 ohm, 10 V, 2.5 V
ROHM
晶体管, MOSFET, N沟道, 1 A, 20 V, 0.34 ohm, 4.5 V, 1 V
ROHM
功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.066 ohm, 10 V, 4 V
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功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.26 ohm, 10 V, 4 V
ROHM
单晶体管 双极, AEC-Q101, PNP, -50 V, 320 MHz, 2 W, -2 A, 180 hFE
ROHM
单晶体管, IGBT, 场截止沟道, 16 A, 1.65 V, 94 W, 650 V, TO-263S, 3 引脚
ROHM
Silicon Carbide Power MOSFET, N Channel, 72 A, 1.2 kV, 0.03 ohm, 18 V, 5.6 V
ROHM
单晶体管, IGBT, 场截止沟道, 50 A, 1.6 V, 174 W, 650 V, TO-247N, 3 引脚
ROHM
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.115 ohm, 10 V, 5 V
ROHM
单晶体管, IGBT, 场截止沟道, 85 A, 1.65 V, 277 W, 650 V, TO-247N, 3 引脚
ROHM
单晶体管 双极, NPN, 50 V, 180 MHz, 200 mW, 150 mA, 120 hFE
ROHM
功率场效应管, MOSFET, N沟道, 25 A, 600 V, 0.14 ohm, 10 V, 5 V
ROHM
单晶体管 双极, NPN, 80 V, 100 MHz, 500 mW, 500 mA, 82 hFE
ROHM
单晶体管, IGBT, 场截止沟道, 30 A, 1.65 V, 133 W, 650 V, TO-263S, 3 引脚
ROHM
功率场效应管, MOSFET, N沟道, 76 A, 600 V, 0.04 ohm, 10 V, 5 V
ROHM
功率场效应管, MOSFET, N沟道, 55 A, 1.2 kV, 0.04 ohm, 18 V, 5.6 V
ROHM
晶体管, MOSFET, N沟道, 2.5 A, 30 V, 0.048 ohm, 4.5 V, 1.5 V
ROHM
单晶体管 双极, NPN, 80 V, 200 MHz, 10 W, 5 A, 120 hFE
ROHM
晶体管, MOSFET, N沟道, 2.5 A, 45 V, 0.095 ohm, 4.5 V, 1.5 V