规格：在电阻RDS（上） 0.2ohm,
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 890 mA, 20 V, 0.2 ohm, 4.5 V, 1.2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 1.75 A, 100 V, 0.2 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 890 mA, 20 V, 0.2 ohm, 4.5 V, 1.2 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 13 A, -100 V, 200 mohm, -10 V, -4 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 3.5 A, 100 V, 0.2 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.7 A, 60 V, 0.2 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.3 A, 100 V, 0.2 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 9.7 A, 100 V, 200 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.6 A, 100 V, 200 mohm, 10 V, 4 V
(EN)
VISHAY
MOSFET, N CHANNEL, 60V, 2.7A, SOT-223-4
(EN)
VISHAY
MOSFET, N CHANNEL, 60V, 2.7A, SOT-223-4
(EN)
INFINEON
晶体管, MOSFET, P沟道, -9.7 A, -60 V, 0.2 ohm, -10 V, -1.5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -19 A, -100 V, 0.2 ohm, -10 V, -4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 14 A, 500 V, 0.2 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2.4 A, -60 V, 0.2 ohm, -10 V, -2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 9.7 A, 100 V, 0.2 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 20 A, 500 V, 0.2 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
单晶体管 双极, N沟道, 5 A, 70 V, 0.2 ohm, 10 V, 55 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 20 A, 500 V, 0.2 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.6 A, 100 V, 0.2 ohm, 10 V, 2 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 16 A, 600 V, 0.2 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 16 A, 600 V, 0.2 ohm, 10 V, 3 V
(EN)
NTE ELECTRONICS
场效应管, MOSFET, N沟道, 60V V(BR)DSS
(EN)VISHAY
晶体管, MOSFET, P沟道, -9.9 A, -50 V, 0.2 ohm, -10 V, -4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 16 A, 600 V, 0.2 ohm, 10 V, 3 V
(EN)
