规格：在电阻RDS（上） 0.6ohm,
INFINEON
晶体管, MOSFET, P沟道, 610 mA, -30 V, 600 mohm, -10 V, -1 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -760 mA, -30 V, 0.6 ohm, -10 V, -1 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -780 mA, -20 V, 0.6 ohm, -4.5 V, -1.5 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 5 A, 200 V, 0.6 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 600 mA, -20 V, 600 mohm, -4.5 V, -1.5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
(EN)
VISHAY
MOSFET, P CHANNEL, -100V, -5.6A, TO-252-3
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -5.6 A, -100 V, 0.6 ohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 5 A, 200 V, 0.6 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 1 A, -100 V, 600 mohm, -10 V, -4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4.5 A, 200 V, 0.6 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 200V, 0.6OHM, 4.5A, TO-252-3
(EN)INFINEON
晶体管, MOSFET, N沟道, 5 A, 200 V, 0.6 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 610 mA, -30 V, 600 mohm, -10 V, -1 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 600 mA, -20 V, 600 mohm, -4.5 V, -1.5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
(EN)
