规格：在电阻RDS（上） 0.045ohm,
INFINEON
晶体管, MOSFET, N沟道, 4.2 A, 20 V, 45 mohm, 4.5 V, 1.2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 2.6 A, 20 V, 0.045 ohm, 4.5 V, 400 mV
(EN)
VISHAY
场效应管, MOSFET, N沟道, 20V, 2.9A, TO-236
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.6 A, 20 V, 0.045 ohm, 4.5 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -5.8 A, -30 V, 0.045 ohm, -10 V, -1 V
(EN)
STMICROELECTRONICS
双路场效应管, MOSFET, 双N沟道, 4 A, 60 V, 0.045 ohm, 10 V, 1.7 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 2.9 A, 20 V, 0.045 ohm, 8 V, 850 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4 A, -20 V, 0.045 ohm, -4.5 V, -600 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.4 A, 30 V, 0.045 ohm, 10 V, 1 V
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -5 A, -30 V, 0.045 ohm, -10 V, -1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 5.2 A, 55 V, 0.045 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 4 A, 20 V, 45 mohm, 4.5 V, 1.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 27 A, 55 V, 0.045 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, P CHANNEL, -35V, 0.045OHM, -4.3A, SUPERSOT-6
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 4.5 A, 30 V, 0.045 ohm, 10 V, 2.6 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 2.3 A, 60 V, 0.045 ohm, 10 V, 1.8 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -5.4 A, -30 V, 0.045 ohm, -10 V, -1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4.3 A, -35 V, 0.045 ohm, -10 V, -1.8 V
(EN)
WOLFSPEED
功率场效应管, MOSFET, N沟道, 72 A, 1.7 kV, 0.045 ohm, 20 V, 2.6 V
(EN)DIODES INC.
双路场效应管, MOSFET, 双P沟道, -6.9 A, -30 V, 0.045 ohm, -10 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 23 A, 30 V, 0.045 ohm, 10 V, 1 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 0.045 ohm, -10 V, -2.5 V
(EN)
STMICROELECTRONICS
场效应管, MOSFET, 双N沟道, 60V, SOIC
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3 A, 20 V, 0.045 ohm, 4.5 V, 1.8 V
(EN)VISHAY
场效应管, MOSFET, N通道, 20V, 0.045Ω, 2.6A
(EN)
