规格：在电阻RDS（上） 0.072ohm,
VISHAY
双路场效应管, MOSFET, 双N沟道, 2.9 A, 30 V, 0.072 ohm, 10 V, 1 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 43.3 A, 700 V, 0.072 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, AEC-Q101, N沟道, 43.3 A, 650 V, 0.072 ohm, 10 V, 4 V
(EN)
VISHAY
MOSFET, P CHANNEL, -12V, -4A, SOT-363-6
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, P Channel, -2.5 A, -60 V, 72 mohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2.5 A, -60 V, 0.072 ohm, -10 V, -3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -4 A, -12 V, 0.072 ohm, -1.5 V, 400 mV
(EN)ADVANCED POWER ELECTRONICS CORP
双路场效应管, MOSFET, N和P沟道, 3.3 A, 30 V, 0.072 ohm, 10 V, 1 V
(EN)
ADVANCED POWER ELECTRONICS CORP
双路场效应管, MOSFET, N和P沟道, 9 A, 60 V, 0.072 ohm, 10 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 3 A, 60 V, 0.072 ohm, 10 V, 1.7 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 3 A, 60 V, 0.072 ohm, 10 V, 1.7 V
(EN)
