规格：在电阻RDS（上） 0.046ohm,
INFINEON
晶体管, MOSFET, N沟道, 3.4 A, 30 V, 0.046 ohm, 4.5 V, 800 mV
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 5.3 A, 60 V, 0.046 ohm, 10 V, 2.5 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 5.3 A, 60 V, 0.046 ohm, 10 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 3.1 A, 60 V, 0.046 ohm, 10 V, 1.7 V
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3.5 A, 30 V, 0.046 ohm, 10 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, 沟槽式FET, N沟道, 6 A, 60 V, 0.046 ohm, 10 V, 3 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 4.5 A, 60 V, 0.046 ohm, 10 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 3.4 A, 30 V, 0.046 ohm, 4.5 V, 800 mV
(EN)
VISHAY
场效应管, MOSFET, N沟道 与 P 通道, 60V, 0.046Ω
(EN)INFINEON
晶体管, MOSFET, N沟道, 3.4 A, 30 V, 0.046 ohm, 4.5 V, 800 mV
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 5.3 A, 60 V, 0.046 ohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -20 A, -60 V, 0.046 ohm, -10 V, -1.5 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 8 A, 60 V, 0.046 ohm, 10 V, 2 V
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3.5 A, 30 V, 0.046 ohm, 10 V, 1 V
(EN)
