规格：在电阻RDS（上） 0.135ohm,
INFINEON
晶体管, MOSFET, P沟道, -2.3 A, -30 V, 0.135 ohm, -10 V, -1.3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 12 A, 200 V, 0.135 ohm, 10 V, 4.9 V
(EN)
INFINEON
双路场效应管, MOSFET, 双P沟道, -5.1 A, -30 V, 0.135 ohm, -10 V, -1.8 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -30V, -2.3 A, SOT-23
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 22.4 A, 650 V, 0.135 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 21 A, 500 V, 0.135 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 22.4 A, 650 V, 0.135 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.135 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 22.4 A, 650 V, 0.135 ohm, 10 V, 4 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 16 A, 200 V, 0.135 ohm, 10 V, 5.25 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 22.4 A, 650 V, 0.135 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 21 A, 500 V, 0.135 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.135 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 21 A, 500 V, 0.135 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 21 A, 500 V, 0.135 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 1.8 A, 30 V, 0.135 ohm, 10 V, 2.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1.2 A, -20 V, 0.135 ohm, -4.5 V, 900 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1.2 A, -20 V, 0.135 ohm, -4.5 V, 900 mV
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 2.4 A, 30 V, 0.135 ohm, 10 V, 1 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 2.4 A, 30 V, 0.135 ohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -2.3 A, -30 V, 0.135 ohm, -10 V, -1.3 V
(EN)
