规格：在电阻RDS（上） 0.0027ohm,
INFINEON
晶体管, MOSFET, N沟道, 84 A, 25 V, 0.0027 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 40 V, 0.0027 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -49 A, -30 V, 0.0027 ohm, -10 V, -1.7 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 36 A, 40 V, 0.0027 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 40 V, 0.0027 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 78 A, 30 V, 0.0027 ohm, 10 V, 2.2 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 18 A, 30 V, 0.0027 ohm, 10 V, 2.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, P CHANNEL, -30V, 0.0027OHM, -49A, POWER 56-8
(EN)VISHAY
晶体管, MOSFET, P沟道, -36 A, -30 V, 0.0027 ohm, -10 V, -2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 80 V, 0.0027 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 30V, 0.0027Ω, 93A, SOIC-8
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0027 ohm, 10 V, 2.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 60 V, 0.0027 ohm, 10 V, 1.7 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 151 A, 60 V, 0.0027 ohm, 10 V, 2.8 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 90 A, 40 V, 0.0027 ohm, 10 V, 1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 36 A, 40 V, 0.0027 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 102 A, 40 V, 0.0027 ohm, 10 V, 3.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0027 ohm, 10 V, 3 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 25V, 40A, PQFN-8
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 93 A, 30 V, 0.0027 ohm, 10 V, 1.63 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 90 A, 60 V, 0.0027 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 22 A, 25 V, 0.0027 ohm, 10 V, 1.6 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 86 A, 60 V, 0.0027 ohm, 10 V, 4 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 60V, 86A, TO-220-3
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 93 A, 30 V, 0.0027 ohm, 10 V, 1.63 V
(EN)
