规格：在电阻RDS（上） 75mohm,
INFINEON
场效应管, MOSFET
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 23 A, 100 V, 75 mohm, 10 V, 3 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -1.5 A, -20 V, 75 mohm, -4.5 V, -600 mV
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 200V, 30A, TO-247AC
(EN)
INFINEON
晶体管, MOSFET, N沟道, 4 A, 55 V, 75 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 31 A, 200 V, 75 mohm, 10 V, 2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 3.8 A, -30 V, 75 mohm, 10 V, -1 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 60 A, 600 V, 75 mohm, 10 V, 4.5 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -1.5 A, -20 V, 75 mohm, -4.5 V, -600 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -3.8 A, -20 V, 75 mohm, -4.5 V, -800 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -3.7A, -20V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 17A, IPAK
(EN)
VISHAY
场效应管, MOSFET, 双P沟道, -30V, 6.4A
(EN)
TOSHIBA
晶体管, MOSFET, N沟道, 3.9 A, 40 V, 75 mohm, 10 V, 2.3 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 3.8 A, -30 V, 75 mohm, 10 V, -1 V
(EN)
