规格：在电阻RDS（上） 6.5mohm,
VISHAY
晶体管, MOSFET, N沟道, 30 A, 30 V, 6.5 mohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V, 19.3A, SOIC-8
(EN)
VISHAY
晶体管, MOSFET, N沟道, 19.3 A, 30 V, 6.5 mohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, 汽车, N沟道, 110 A, 55 V, 6.5 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 55 V, 6.5 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 86 A, 30 V, 6.5 mohm, 10 V, 1.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 130 A, 40 V, 6.5 mohm, 10 V, 1 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 60 V, 6.5 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 55 V, 6.5 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 16 A, 20 V, 6.5 mohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 110 A, 40 V, 6.5 mohm, 10 V, 1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 19.3 A, 30 V, 6.5 mohm, 10 V, 1 V
(EN)
VISHAY
单晶体管 双极, N沟道, 180 A, 100 V, 6.5 mohm, 10 V
(EN)
