规格：在电阻RDS（上） 0.009ohm,
INFINEON
晶体管, MOSFET, P沟道, -40 A, -30 V, 0.009 ohm, -10 V, -2.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 9.6 A, 60 V, 0.009 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 50 A, 50 V, 0.009 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 12 A, 8 V, 0.009 ohm, 4.5 V, 800 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 67 A, 150 V, 0.009 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 54 A, 60 V, 0.009 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 20 A, 60 V, 0.009 ohm, 10 V, 3 V
(EN)
TOSHIBA
晶体管, MOSFET, 功率, N沟道, 24 A, 60 V, 0.009 ohm, 10 V, 1.3 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -45 A, -30 V, 0.009 ohm, -10 V, -1.5 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 70 A, 100 V, 0.009 ohm, 15 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 9.6 A, 60 V, 0.009 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 67 A, 60 V, 0.009 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12.8 A, 40 V, 0.009 ohm, 10 V, 1.8 V
(EN)
SEMIKRON
单晶体管 双极, N沟道, 180 A, 200 V, 0.009 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 10 A, 40 V, 0.009 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 15 A, 30 V, 0.009 ohm, 10 V, 2 V
(EN)ROHM
晶体管, MOSFET, P沟道, -10 A, -30 V, 0.009 ohm, -10 V, -2.5 V
(EN)
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.009 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.009 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12.8 A, 40 V, 0.009 ohm, 10 V, 1.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 10 A, 40 V, 0.009 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 74 A, 80 V, 0.009 ohm, 10 V, 3 V
(EN)
RENESAS
晶体管, MOSFET, N沟道, 30 A, 80 V, 0.009 ohm, 10 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 9.6 A, 60 V, 0.009 ohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.009 ohm, 10 V, 1.5 V
(EN)
