规格：在电阻RDS（上） 0.41ohm,
VISHAY
MOSFET, N CHANNEL, 20V, 600mA, SOT-416-3
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 9.2 A, 600 V, 0.41 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -6.6 A, -100 V, 0.41 ohm, -10 V, -4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 640 mA, 30 V, 0.41 ohm, 10 V, 1 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 13.1 A, 600 V, 0.41 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 10 A, 525 V, 0.41 ohm, 10 V, 3.75 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 600 mA, 20 V, 0.41 ohm, 4.5 V, 900 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -6.6 A, -100 V, 0.41 ohm, -10 V, -4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 9.2 A, 600 V, 0.41 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 640 mA, 30 V, 0.41 ohm, 10 V, 1 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 540 mA, 30 V, 0.41 ohm, 10 V, 2.6 V
(EN)VISHAY
双路场效应管, MOSFET, N和P沟道, 540 mA, 30 V, 0.41 ohm, 10 V, 2.6 V
(EN)
