规格：在电阻RDS（上） 53mohm,
VISHAY
场效应管, MOSFET, P沟道, -30V, 4A, TO-236
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N+P沟道, 30V, SOIC
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 3.9 A, 30 V, 53 mohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -30V, 4A, TO-236
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 3.9 A, 30 V, 53 mohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, 双P沟道, -30V, 4.9A
(EN)
