规格：在电阻RDS（上） 29mohm,
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 6 A, 40 V, 29 mohm, 10 V, 1.9 V
(EN)INFINEON
双路场效应管, MOSFET, N和P沟道, 6.5 A, 30 V, 29 mohm, 10 V, 1 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 6.5 A, 30 V, 29 mohm, 10 V, 1 V
(EN)
INTERNATIONAL RECTIFIER
双路场效应管, N/P通道, MOSFET, 30V, SOIC
(EN)
INFINEON
晶体管, MOSFET, N沟道, 38 A, 80 V, 29 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 57 A, 300 V, 29 mohm, 10 V, 5 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 6.6 A, 20 V, 29 mohm, 4.5 V, 700 mV
(EN)
INTERNATIONAL RECTIFIER
双路场效应管, N 通道, MOSFET, 30V, SOIC
VISHAY
场效应管, MOSFET, P沟道, -80V, 28A, SOIC
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 6 A, 40 V, 29 mohm, 10 V, 1.9 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 6.3 A, 80 V, 29 mohm, 10 V, 4 V
(EN)
