规格：在电阻RDS（上） 4.2mohm,
INFINEON
晶体管, MOSFET, N沟道, 80 A, 30 V, 4.2 mohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 4.2 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 18 A, 30 V, 4.2 mohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -50 A, -30 V, 4.2 mohm, -10 V, -1.2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 80 A, 30 V, 4.2 mohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 160 A, 60 V, 4.2 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 18 A, 30 V, 4.2 mohm, 10 V, 2.5 V
(EN)
VISHAY
场效应管, MOSFET, N通道, 20V, 25A, SOIC, 整卷
(EN)VISHAY
晶体管, MOSFET, P沟道, -50 A, -30 V, 4.2 mohm, -10 V, -1.2 V
(EN)
