规格：在电阻RDS（上） 0.0023ohm,
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 27 A, 12 V, 0.0023 ohm, 4.5 V, 1.3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 24 A, 30 V, 0.0023 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 28 A, 20 V, 0.0023 ohm, 4.5 V, 800 mV
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 78 A, 30 V, 0.0023 ohm, 10 V, 2.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 24 A, 30 V, 0.0023 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0023 ohm, 10 V, 2.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0023 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0023 ohm, 10 V, 2 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 180 A, 100 V, 0.0023 ohm, 10 V, 3.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 200 A, 100 V, 0.0023 ohm, 10 V, 2.8 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 180 A, 100 V, 0.0023 ohm, 10 V, 3.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0023 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 280 A, 40 V, 2.3 mohm, 10 V, 4 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 100V, 150A, TO-220-3
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET, N沟道, 150 A, 100 V, 0.0023 ohm, 10 V, 2.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 50 A, 20 V, 0.0023 ohm, 20 V, 2.6 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0023 ohm, 10 V, 2.7 V
VISHAY
场效应管, MOSFET, N沟道, 20V, 50A, SOIC
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 228 A, 55 V, 0.0023 ohm, 10 V, 2.3 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0023 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0023 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0023 ohm, 10 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0023 ohm, 10 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0023 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0023 ohm, 10 V, 2 V
(EN)
