规格：在电阻RDS（上） 0.0076ohm,
INFINEON
晶体管, MOSFET, N沟道, 68 A, 80 V, 0.0076 ohm, 10 V, 4.9 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 56 A, 40 V, 0.0076 ohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 60V, 0.0076Ω, 100A, TO-220-3
(EN)
VISHAY
晶体管, MOSFET, P沟道, -50 A, -40 V, 0.0076 ohm, -10 V, -1.5 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET, N沟道, 100 A, 80 V, 0.0076 ohm, 10 V, 2.8 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 80V, 100A, TO-220-3
(EN)
ON SEMICONDUCTOR
单晶体管 双极, N沟道, 30 A, 40 V, 0.0076 ohm, 10 V, 3.5 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 25 A, 30 V, 0.0076 ohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -18 A, -30 V, 0.0076 ohm, -10 V, -2.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 51 A, 40 V, 0.0076 ohm, 10 V, 1.5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 67 A, 30 V, 0.0076 ohm, 4.5 V, 1.7 V
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 25 A, 30 V, 0.0076 ohm, 10 V, 2.5 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -18 A, -30 V, 0.0076 ohm, -10 V, -2.5 V
(EN)
