规格：在电阻RDS（上） 0.175ohm,
DIODES INC.
晶体管, MOSFET, N沟道, 1.3 A, 20 V, 0.175 ohm, 4.5 V, 950 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, -11 A, -55 V, 175 mohm, -10 V, -4 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -1 A, -20 V, 0.175 ohm, -4.5 V, -900 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, -11 A, -55 V, 0.175 ohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -11 A, -55 V, 0.175 ohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -11 A, -55 V, 175 mohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 12 A, -55 V, 0.175 ohm, -10 V, -4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道
(EN)
INTERNATIONAL RECTIFIER
场效应管, P通道, MOSFET, -55V, 12A, TO-220AB
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -1.6 A, -20 V, 0.175 ohm, -8 V, -950 mV
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -1.6 A, -20 V, 0.175 ohm, -8 V, -950 mV
(EN)INFINEON
晶体管, MOSFET, P沟道, -11 A, -55 V, 0.175 ohm, -10 V, -4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 1.9 A, 80 V, 0.175 ohm, 10 V, 1.7 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 1.9 A, 80 V, 0.175 ohm, 10 V, 1.7 V
(EN)
