规格：在电阻RDS（上） 320mohm,
VISHAY
场效应管, MOSFET, N沟道
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 11 A, 600 V, 320 mohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 27 A, 800 V, 320 mohm, 10 V, 4.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 11 A, 650 V, 320 mohm, 10 V, 5 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 660 mA, 20 V, 320 mohm, 4.5 V, 600 mV
(EN)
