规格：在电阻RDS（上） 0.0042ohm,
INFINEON
晶体管, MOSFET, N沟道, 80 A, 30 V, 0.0042 ohm, 10 V, 2.2 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 40 A, 30 V, 0.0042 ohm, 10 V, 2.4 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 25 V, 0.0042 ohm, 4.5 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 30 V, 0.0042 ohm, 10 V, 2.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 81 A, 25 V, 0.0042 ohm, 10 V, 1.8 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 21.5 A, 12 V, 0.0042 ohm, 4.5 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 123 A, 100 V, 0.0042 ohm, 10 V, 3.6 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 110 A, 60 V, 0.0042 ohm, 10 V, 3.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 25 A, 25 V, 0.0042 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 60 V, 0.0042 ohm, 10 V, 1.7 V
(EN)
TEXAS INSTRUMENTS
N CHANNEL MOSFET, 25V, 60A, SON
(EN)
INFINEON
晶体管, MOSFET, N沟道, 110 A, 60 V, 0.0042 ohm, 10 V, 3.7 V
(EN)
VISHAY
MOSFET, N CHANNEL, 12V, 21.5A, SOIC-8
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 30 V, 0.0042 ohm, 10 V, 1 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 25V, 25A, PQFN-8
(EN)
VISHAY
场效应管, MOSFET, 双路N沟道, 30V, 40A, POWERPAIR-8
(EN)
INFINEON
晶体管, MOSFET, N沟道, 58 A, 25 V, 0.0042 ohm, 10 V, 2 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0042 ohm, 8 V, 1.2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -50 A, -30 V, 0.0042 ohm, -10 V, -2.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 109 A, 60 V, 0.0042 ohm, 10 V, 2.2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 109 A, 60 V, 0.0042 ohm, 10 V, 2.2 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -50 A, -30 V, 0.0042 ohm, -10 V, -2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 19 A, 25 V, 0.0042 ohm, 10 V, 1.8 V
(EN)
VISHAY
场效应管, MOSFET, N通道, 12V, 21.5A, SOIC, 整卷
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 40 A, 30 V, 0.0042 ohm, 10 V, 2.4 V
(EN)
