规格：阈值电压 Vgs 1.8V,
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 27 A, 40 V, 0.0019 ohm, 10 V, 1.8 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 14 A, 30 V, 0.0066 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 16 A, 30 V, 0.0057 ohm, 10 V, 1.8 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 81 A, 25 V, 0.0041 ohm, 4.5 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 56 A, 30 V, 9.5 mohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.2 A, 60 V, 0.047 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 86 A, 30 V, 6.5 mohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0011 ohm, 10 V, 1.8 V
(EN)
NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 70 A, 25 V, 0.00525 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 3 mohm, 10 V, 1.8 V
(EN)
NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 70 A, 25 V, 0.00493 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 66A, TO-252
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15 A, 30 V, 8 mohm, 10 V, 1.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 25 A, 25 V, 0.0042 ohm, 10 V, 1.8 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 60V, 100A, 0.0025Ω, SON-8
(EN)INFINEON
晶体管, MOSFET, N沟道, 25 A, 30 V, 0.004 ohm, 10 V, 1.8 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, 30V, 18A, SOIC
(EN)
INFINEON
场效应管, MOSFET, N沟道, 30V, 16A, PQFN
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET™, N沟道, 349 A, 60 V, 0.0013 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 14 A, 30 V, 8.7 mohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 13 A, 30 V, 11.3 mohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 12 A, 30 V, 7 mohm, 10 V, 1.8 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3 A, 20 V, 0.045 ohm, 4.5 V, 1.8 V
(EN)
